devices Quiz
EN
appareils
Choisissez la réponse la plus appropriée pour chaque question.- Question 1 :
Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming conductive nanofilaments within solid-state memory devices, enabling their resistive switching capacity.
- devices
- device
- Question 2 :
Avoid cycling the device unnecessarily.
- devices
- device
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